发明授权
US06344691B1 Barrier materials for metal interconnect in a semiconductor device
有权
用于半导体器件中的金属互连的阻挡材料
- 专利标题： Barrier materials for metal interconnect in a semiconductor device
- 专利标题（中）： 用于半导体器件中的金属互连的阻挡材料
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申请号： US09664863申请日： 2000-09-19
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公开(公告)号： US06344691B1公开(公告)日： 2002-02-05
- 发明人: John A. Iacoponi , Shekhar Pramanick
- 申请人： John A. Iacoponi , Shekhar Pramanick
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
A semiconductor device is provided with a tantalum layer to line the channels and vias of a semiconductor, a tungsten nitride layer at a low temperature on the tantalum layer, and a copper conductor layer on the tungsten nitride layer. The tungsten nitride acts as a highly efficient copper barrier material with high resistivity while the tantalum layer acts as a conductive barrier material to reduce the overall resistance of the barrier layer.
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