A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder. By depositing an amorphous silicon film on the inner wall of the cylinder-type capacitor and Si-rich tungsten silicide film on the outer wall, the surface area of the inner wall expands through normal SMPS and a rugged tungsten silicide film is formed on the outer wall. Spacing between cells is preserved, while generation of a bridge is prevented.