发明授权
US06348394B1 Method and device for array threshold voltage control by trapped charge in trench isolation
失效
用于沟槽隔离中捕获电荷的阵列阈值电压控制的方法和装置
- 专利标题： Method and device for array threshold voltage control by trapped charge in trench isolation
- 专利标题（中）： 用于沟槽隔离中捕获电荷的阵列阈值电压控制的方法和装置
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申请号： US09573375申请日： 2000-05-18
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公开(公告)号： US06348394B1公开(公告)日： 2002-02-19
- 发明人: Jack A. Mandelman , Rama Divakaruni , Herbert Ho , Giuseppe La Rosa , Yujun Li , Jochen Beintner , Radhika Srinivasan
- 申请人： Jack A. Mandelman , Rama Divakaruni , Herbert Ho , Giuseppe La Rosa , Yujun Li , Jochen Beintner , Radhika Srinivasan
- 主分类号： H01L2176
- IPC分类号： H01L2176
摘要：
A semiconductor device and method of manufacturing thereof are provided. A trench is formed in a semiconductor substrate. A thin oxide liner is preferably formed on surfaces of the trench. A nitride liner is formed in the trench. Charge is trapped in the nitride liner. In a preferred embodiment, the trench is filled with an oxide by an HDP process to increase the amount of charge trapped in the nitride liner. Preferably, the oxide fill is formed directly on the nitride liner.