发明授权
- 专利标题: Semiconductor device having different field oxide sizes
- 专利标题(中): 具有不同场氧化物尺寸的半导体器件
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申请号: US09519598申请日: 2000-03-06
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公开(公告)号: US06351014B2公开(公告)日: 2002-02-26
- 发明人: Yasuo Inoue , Tadashi Nishimura , Yasuo Yamaguchi , Toshiaki Iwamatsu
- 申请人: Yasuo Inoue , Tadashi Nishimura , Yasuo Yamaguchi , Toshiaki Iwamatsu
- 优先权: JP5-165426 19930705; JP5-304405 19931203
- 主分类号: H01L2701
- IPC分类号: H01L2701
摘要:
According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS active region of the SOI can be electrically isolated completely. Therefore, latchup can be prevented completely. As a result, it is possible to provide a semiconductor device using an SOI substrate which can implement high integration by eliminating reduction of the breakdown voltage between source and drain, which was a problem of a conventional SOI field effect transistor, as well as by efficiently disposing a body contact region, which hampers high integration, and a method of manufacturing the same.
公开/授权文献
- US20020005552A1 SEMICONDUCTOR DEVICE HAVING DIFFERENT FIELD OXIDE SIZES 公开/授权日:2002-01-17