发明授权
- 专利标题： Low temperature self-aligned collar formation
- 专利标题（中）： 低温自对准领结形成
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申请号： US09324927申请日： 1999-06-03
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公开(公告)号： US06352893B1公开(公告)日： 2002-03-05
- 发明人: Alexander Michaelis , Stephan Kudelka , Jochen Beintner , Oliver Genz
- 申请人： Alexander Michaelis , Stephan Kudelka , Jochen Beintner , Oliver Genz
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
A method for fabricating a semiconductor device, in accordance with the present invention, includes the steps of providing a semiconductor wafer having exposed p-doped silicon regions and placing the wafer in an electrochemical cell such that a solution including electrolytes interacts with the exposed p-doped silicon regions to form an oxide on the exposed p-doped silicon regions when a potential difference is provided between the wafer and the solution.