In a semiconductor device, a conductive structure comprising an interconnect and an overlying plug integrally extending therefrom is provided. The structure can be provided by a damascene process, wherein an opening is defined in insulation deep enough to accommodate the height of an interconnect and its overlying plug. The opening is filled with metal, and non-plug areas of the metal are then recessed down to a standard interconnect height within the trench. The full height of the metal is retained at the plug site. Oxide is then deposited over the recessed portions. Alternatively, a continuous metal layer is provided that is deep enough to accommodate the height of an interconnect and its overlying plug. The metal is then etched to form the interconnect/plug structure, and insulation is deposited thereover. Multiple structures may be provided at the same level using these processes, and multiple levels of these structures may be similarly provided.