There is provided a semiconductor device including (a) a semiconductor substrate on which an integrated circuit is formed, (b) a ground electrode formed on the semiconductor substrate, (c) a bonding wire through which the ground electrode is grounded, the bonding wire having inductance, and (d) a capacitor positioned in series with the inductance, the capacitor and the inductance cooperating with each other to form a resonance circuit at an operating frequency of the integrated circuit. For instance, the capacitor is comprised of a lower electrode formed on or above the semiconductor substrate, an insulating film covering the lower electrode therewith, and an upper electrode formed on the insulating film above the lower electrode. The provided semiconductor device reduces noises and saves power.