发明授权
- 专利标题: Method for making BaTiO3-based dielectric
- 专利标题(中): 制备BaTiO3基电介质的方法
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申请号: US09693930申请日: 2000-10-23
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公开(公告)号: US06358464B1公开(公告)日: 2002-03-19
- 发明人: Byung Kee Lee , Yang Il Jung , Ho Yong Lee , Suk-Joong Kang , Sung Yoon Chung
- 申请人: Byung Kee Lee , Yang Il Jung , Ho Yong Lee , Suk-Joong Kang , Sung Yoon Chung
- 优先权: KR2000-10895 20000304
- 主分类号: C04B3332
- IPC分类号: C04B3332
摘要:
A method for making a BaTiO3-based dielectric having a high dielectric constant and a low dielectric loss wherein, a BaTiO3-based body is subjected to a pre-heat treatment in a hydrogen (H2) atmosphere or a reducing atmosphere containing mixed gas of hydrogen and nitrogen in a ratio of hydrogen:nitrogen=5 to 100%:0 to 95% prior to a sintering process in the manufacture of dielectrics, in order to obtain a reduced average grain size of BaTiO3. By virtue of the reducing average grain size of BaTiO3, a BaTiO3-based dielectric having a high dielectric constant and a low dielectric loss is obtained. This method provides an advantage in that it is possible to make a BaTiO3-based dielectric having a very small average grain size while having a high relative density in accordance with a simple heat treatment conducted for pure BaTiO3 or even for BaTiO3 added with an additive in a reducing atmosphere at a temperature less than a liquid phase forming temperature, prior to a sintering process for sintering the BaTiO3.
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