发明授权
- 专利标题: Method for forming inter metal dielectric
- 专利标题(中): 形成金属间电介质的方法
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申请号: US09808921申请日: 2001-03-16
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公开(公告)号: US06358845B1公开(公告)日: 2002-03-19
- 发明人: Chine-Gie Lou
- 申请人: Chine-Gie Lou
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
A method is disclosed for forming insulative inter metal dielectric (IMD) layers without the attendant problems of having voids, key-holes and air gaps. This is accomplished by reducing the aspect ratio of the gaps between metal lines through a judicious two-step dielectric filling process and through the use of two-step removal of the photoresist. That is, the gap is filled with photoresist first, and then partially removed, thereby leaving a portion in the gap to reduce the aspect ratio of the gap. When a second insulative layer is formed over the substrate, the gap between the metal lines is filled without the conventional attendant problem of forming voids or key-holes. Hence, void free IMD integration with improved IMD gap filling is achieved along with improved IMD thermal conductivity through the use of a metal liner.
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