发明授权
- 专利标题: Semiconductor device with movement of positive ion prevented
- 专利标题(中): 具有正离子运动的半导体器件
-
申请号: US09447214申请日: 1999-11-23
-
公开(公告)号: US06359297B1公开(公告)日: 2002-03-19
- 发明人: Takami Nagata , Satoshi Yamaguchi
- 申请人: Takami Nagata , Satoshi Yamaguchi
- 优先权: JP10-338814 19981130
- 主分类号: H01L27108
- IPC分类号: H01L27108
摘要:
A semiconductor device includes an interlayer formed to cover a semiconductor substrate, a circuit element, a preventing diffusion region, a power supply line and a ground line. The power supply line is formed on the interlayer to supply a positive voltage to the circuit element. The ground line is formed on the interlayer on an opposite side to the circuit element with respective to the power supply line. The circuit element is formed in a surface portion of a semiconductor substrate. The preventing diffusion region is formed in a surface portion of the semiconductor substrate in correspondence to the power supply line, and is applied with a predetermined positive voltage.
信息查询