发明授权
US06359297B1 Semiconductor device with movement of positive ion prevented 有权
具有正离子运动的半导体器件

  • 专利标题: Semiconductor device with movement of positive ion prevented
  • 专利标题(中): 具有正离子运动的半导体器件
  • 申请号: US09447214
    申请日: 1999-11-23
  • 公开(公告)号: US06359297B1
    公开(公告)日: 2002-03-19
  • 发明人: Takami NagataSatoshi Yamaguchi
  • 申请人: Takami NagataSatoshi Yamaguchi
  • 优先权: JP10-338814 19981130
  • 主分类号: H01L27108
  • IPC分类号: H01L27108
Semiconductor device with movement of positive ion prevented
摘要:
A semiconductor device includes an interlayer formed to cover a semiconductor substrate, a circuit element, a preventing diffusion region, a power supply line and a ground line. The power supply line is formed on the interlayer to supply a positive voltage to the circuit element. The ground line is formed on the interlayer on an opposite side to the circuit element with respective to the power supply line. The circuit element is formed in a surface portion of a semiconductor substrate. The preventing diffusion region is formed in a surface portion of the semiconductor substrate in correspondence to the power supply line, and is applied with a predetermined positive voltage.
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