Invention Grant
US06362099B1 Method for enhancing the adhesion of copper deposited by chemical vapor deposition
失效
通过化学气相沉积法提高铜沉积粘附力的方法
- Patent Title: Method for enhancing the adhesion of copper deposited by chemical vapor deposition
- Patent Title (中): 通过化学气相沉积法提高铜沉积粘附力的方法
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Application No.: US09265290Application Date: 1999-03-09
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Publication No.: US06362099B1Publication Date: 2002-03-26
- Inventor: Srinivas Gandikota , Dennis Cong , Liang Chen , Sesh Ramaswami , Daniel Carl
- Applicant: Srinivas Gandikota , Dennis Cong , Liang Chen , Sesh Ramaswami , Daniel Carl
- Main IPC: H01L2322
- IPC: H01L2322

Abstract:
The present invention provides a method for improving the adhesion of copper and other metal-comprising conductive metals to a barrier layer. A barrier layer is provided that has a first surface that is substantially unoxidized, wherein at least a portion of the first surface is free from the presence of oxygen atoms. A conductive layer is then deposited onto the first surface of the barrier layer. The substantially unoxidized state of the first surface enhances the adhesion of the metal-comprising layer to the barrier layer. The method is particularly useful in obtaining excellent adhesion of a copper nucleation layer to an underlying barrier layer surface.
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