Invention Grant
- Patent Title: Semiconductor sample for transmission electron microscope and method of manufacturing the same
- Patent Title (中): 用于透射电子显微镜的半导体样品及其制造方法
-
Application No.: US09386369Application Date: 1999-08-31
-
Publication No.: US06362474B1Publication Date: 2002-03-26
- Inventor: Masao Okihara
- Applicant: Masao Okihara
- Priority: JP10-295952 19981019
- Main IPC: H01J37317
- IPC: H01J37317
Abstract:
Described here is a method of forming a thin-film portion for allowing electrons produced from a transmission electron microscope to pass therethrough at a portion to be observed of a semiconductor and effecting a predetermined etching process on the thin-film portion thereby to create a semiconductor sample for the transmission electron microscope. Prior to the execution of the etching process, grooves for reducing a stress introduced into the thin-film portion by the etching process are defined in the thin-film portion.
Information query
