A method for measuring a size of fine pattern wherein sizes of a plurality of fine patterns are measured using a scanning electron microscope is disclosed. The measuring method comprises the following procedures of obtaining a secondary electron image while scanning an electron beam on a fine pattern, determining whether or not the secondary electron image thus obtained meets a shape judgment criterion which has been set in advance, and, when the criterion is met as a result of determination processing, measuring a size of the fine pattern but, when the criterion is not met as a result of determination processing, moving to a next measurement area without measuring a size of the fine pattern.