发明授权
- 专利标题： Method of forming semiconductor device with decoupling capacitance
- 专利标题（中）： 用去耦电容形成半导体器件的方法
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申请号： US09634970申请日： 2000-08-09
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公开(公告)号： US06365484B1公开(公告)日： 2002-04-02
- 发明人: Edward Joseph Nowak , Minh Ho Tong
- 申请人： Edward Joseph Nowak , Minh Ho Tong
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A semiconductor device is disclosed that provides a decoupling capacitance and method for the same. The semiconductor device includes a first circuit region having a first device layer over an isolation layer and a second circuit region adjacent the first circuit region having a second device layer over a well. An implant layer is implanted beneath the isolation layer in the first circuit region, which will connect to the well of the second circuit region.