发明授权
- 专利标题: Method of forming semiconductor device with decoupling capacitance
- 专利标题(中): 用去耦电容形成半导体器件的方法
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申请号: US09634970申请日: 2000-08-09
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公开(公告)号: US06365484B1公开(公告)日: 2002-04-02
- 发明人: Edward Joseph Nowak , Minh Ho Tong
- 申请人: Edward Joseph Nowak , Minh Ho Tong
- 主分类号: H01L2120
- IPC分类号: H01L2120
摘要:
A semiconductor device is disclosed that provides a decoupling capacitance and method for the same. The semiconductor device includes a first circuit region having a first device layer over an isolation layer and a second circuit region adjacent the first circuit region having a second device layer over a well. An implant layer is implanted beneath the isolation layer in the first circuit region, which will connect to the well of the second circuit region.