Invention Grant
- Patent Title: Method for fabricating a contact layer
- Patent Title (中): 接触层的制造方法
-
Application No.: US09811798Application Date: 2001-03-19
-
Publication No.: US06365510B2Publication Date: 2002-04-02
- Inventor: Sven Schmidbauer , Norbert Urbansky
- Applicant: Sven Schmidbauer , Norbert Urbansky
- Priority: DE10014917 20000317
- Main IPC: H01L214763
- IPC: H01L214763

Abstract:
A contact layer is used, for example, as a liner for the fabrication of electrical contacts in contact holes. The contact layer is fabricated in two steps, in a first step a first contact layer is deposited, in which only a small proportion of the particles to be sputtered is ionized. In a second sputtering step, a second contact layer is sputtered, in the course of whose fabrication a larger proportion of the particles to be sputtered is ionized. The procedure ensures that the first contact layer is disposed as a protective layer on the substrate by gentle sputtering before the second contact layer is sputtered.
Public/Granted literature
- US20010027012A1 Method for fabricating a contact layer Public/Granted day:2001-10-04
Information query