发明授权
- 专利标题： Low resistance composite contact structure utilizing a reaction barrier layer under a metal layer
- 专利标题（中）： 利用金属层下面的反应阻挡层的低电阻复合接触结构
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申请号： US09641727申请日： 2000-08-21
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公开(公告)号： US06369429B1公开(公告)日： 2002-04-09
- 发明人: Shekhar Pramanick , Ming-Ren Lin , Qi Xiang
- 申请人： Shekhar Pramanick , Ming-Ren Lin , Qi Xiang
- 主分类号： H01L2352
- IPC分类号： H01L2352
摘要：
Low resistance contacts are formed on source/drain regions and gate electrodes by selectively depositing a reaction barrier layer and selectively depositing a metal layer on the reaction barrier layer. Embodiments include selectively depositing an alloy of cobalt and tungsten which functions as a reaction barrier layer preventing silicidation of a layer of nickel or cobalt selectively deposited thereon. Embodiments also include tailoring the composition of the cobalt tungsten alloy so that a thin silicide layer is formed thereunder for reduced contact resistance.
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