- 专利标题： Self-aligned trench capacitor capping process for high density DRAM cells
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申请号： US09426754申请日： 1999-10-26
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公开(公告)号： US06372573B1公开(公告)日： 2002-04-16
- 发明人: Masami Aoki , Hirofumi Inoue , Bruce W. Porth , Max G. Levy , Victor R. Nastasi , Emily E. Fisch , Paul C. Buschner
- 申请人： Masami Aoki , Hirofumi Inoue , Bruce W. Porth , Max G. Levy , Victor R. Nastasi , Emily E. Fisch , Paul C. Buschner
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
A process for eliminating roughness on a silicon nitride trench liner is disclosed. A capping film on the top of the trench is formed in a self-aligned manner. This capping film prevents short circuits between a storage node and a passing word-line.
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