Invention Grant
US06373322B2 Charge pump circuit with bypass transistor 有权
带旁路晶体管的电荷泵电路

  • Patent Title: Charge pump circuit with bypass transistor
  • Patent Title (中): 带旁路晶体管的电荷泵电路
  • Application No.: US09419065
    Application Date: 1999-10-15
  • Publication No.: US06373322B2
    Publication Date: 2002-04-16
  • Inventor: Isamu KobayashiYoshiharu Kato
  • Applicant: Isamu KobayashiYoshiharu Kato
  • Priority: JP11-034128 19990212
  • Main IPC: G05F110
  • IPC: G05F110
Charge pump circuit with bypass transistor
Abstract:
A two stage charge pump circuit can perform either a two stage boosting operation or a single stage boosting operation. The charge pump circuit includes first, second and third gate transistors connected in series between first and second supply voltages, and a bypass transistor. A first booster stage includes a capacitor connected between the first and second gate transistors and a drive circuit. A second booster stage includes a capacitor connected between second and third gate transistors and the drive circuit. The third gate transistor is connected to an internal bus which provides an output voltage to other circuit elements connected to it. The bypass transistor is connected between the first booster stage and the internal bus.
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