发明授权
- 专利标题: Flash anneal
- 专利标题(中): 闪光退火
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申请号: US09910298申请日: 2001-07-20
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公开(公告)号: US06376806B2公开(公告)日: 2002-04-23
- 发明人: Woo Sik Yoo
- 申请人: Woo Sik Yoo
- 主分类号: A21B100
- IPC分类号: A21B100
摘要:
A system for uniformly and controllably heating the active surface of a semiconductor wafer or substrate during processing. The present invention may include a radiation energy source provided, which is enclosed or substantially surrounded by a reflective/absorptive surface, which both reflects and absorbs the radiation, emitted from the energy source. In accordance with the present invention, the resultant energy output as seen by the wafer is substantially free of non-uniformity.
公开/授权文献
- US20010047990A1 Flash anneal 公开/授权日:2001-12-06
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