发明授权
- 专利标题： Method for producing silicon ingot having directional solidification structure and apparatus for producing the same
- 专利标题（中）： 具有定向凝固结构的硅锭的制造方法及其制造方法
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申请号： US09257037申请日： 1999-02-25
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公开(公告)号： US06378835B1公开(公告)日： 2002-04-30
- 发明人: Saburo Wakita , Akira Mitsuhashi , Yoshinobu Nakada , Jun-ichi Sasaki , Yuhji Ishiwari
- 申请人： Saburo Wakita , Akira Mitsuhashi , Yoshinobu Nakada , Jun-ichi Sasaki , Yuhji Ishiwari
- 优先权： JP10-043526 19980225; JP11-029927 19990208
- 主分类号： B22D900
- IPC分类号： B22D900
摘要：
A method for producing a silicon ingot having a directional solidification structure comprising the steps of: placing a silicon raw material into a crucible of a melting device constructed by mounting a chill plate on an underfloor heater, mounting a crucible with a large cross-sectional area on the chill plate, providing an overhead heater over the crucible, and surrounding the circumference of the crucible with a heat insulator; heat-melting the silicon raw material by flowing an electric current through the underfloor heater and overhead heater; chilling the bottom of the crucible by halting the electric current through the underfloor heater after the silicon raw material has been completely melted to form a molten silicon; chilling the bottom of the crucible by flowing an inert gas through the chill plate; and intermittently or continuously lowering the temperature of the overhead heater by intermittently or continuously decreasing the electric current through the overhead heater, and an apparatus for producing the silicon ingot.