发明授权
US06379521B1 Method of producing zinc oxide film, method of producing photovoltaic element, and method of producing semiconductor element substrate
有权
氧化锌膜的制造方法，光电元件的制造方法以及半导体元件基板的制造方法
- 专利标题： Method of producing zinc oxide film, method of producing photovoltaic element, and method of producing semiconductor element substrate
- 专利标题（中）： 氧化锌膜的制造方法，光电元件的制造方法以及半导体元件基板的制造方法
-
申请号： US09222848申请日： 1998-12-30
-
公开(公告)号： US06379521B1公开(公告)日： 2002-04-30
- 发明人: Yutaka Nishio
- 申请人： Yutaka Nishio
- 优先权： JP10-000750 19980106
- 主分类号： C25D2106
- IPC分类号： C25D2106
摘要：
The present invention provides a method of producing a zinc oxide film, which comprises applying current between a conductive base member immersed in an electrodepositing bath and a counter electrode immersed in the electrodepositing bath to form a zinc oxide film on the conductive base member, wherein the electrodepositing bath is maintained at a temperature of 50° C. or more and has a temperature profile such that the temperature of the electrodepositing bath is lower in the final stage of electrodeposition than in the initial of electrodeposition. By the present method, a zinc oxide film with the excellent effect of light containment is stably produced in a short time, thereby producing a solar cell with a high efficiency at low a cost.
信息查询
