发明授权
- 专利标题： Tantalum amide precursors for deposition of tantalum nitride on a substrate
- 专利标题（中）： 用于在衬底上沉积氮化钽的钽酰胺前体
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申请号： US09483859申请日： 2000-01-17
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公开(公告)号： US06379748B1公开(公告)日： 2002-04-30
- 发明人: Gautam Bhandari , Thomas H. Baum
- 申请人： Gautam Bhandari , Thomas H. Baum
- 主分类号： C23C1406
- IPC分类号： C23C1406
摘要：
Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microelectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.