A capacitor of a semiconductor device which uses a high dielectric layer and a method of manufacturing the same are provided. The capacitor includes a storage electrode having at least two conductive patterns which overlap each other and a thermally-stable material layer pattern being positioned between the conductive layer patterns. The storage electrode and the thermally-stable material layer pattern are formed by alternately forming a conductive layer and a thermally-stable material layer, and patterning the conductive layer and the thermally-stable material layer to have predetermined shapes. With the present structure, it is possible to prevent the storage electrode from being transformed or broken during a thermal treatment process for forming a high dielectric layer on the storage electrode or in a subsequent high temperature thermal treatment process.