发明授权
- 专利标题： Silicided undoped polysilicon for capacitor bottom plate
- 专利标题（中）： 用于电容器底板的硅化无掺杂多晶硅
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申请号： US09661717申请日： 2000-09-14
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公开(公告)号： US06380609B1公开(公告)日： 2002-04-30
- 发明人: Douglas A. Prinslow , F. Scott Johnson
- 申请人： Douglas A. Prinslow , F. Scott Johnson
- 主分类号： H01L2900
- IPC分类号： H01L2900
摘要：
A capacitor (110) having a bottom plate (104) that comprises undoped polysilicon (106) which has been silicided (108). An advantage of the invention is providing a capacitor (110) having reduced parasitic capacitance to the substrate (100) and reduced sheet resistance of the bottom plate (104).
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