Ion implantation method for fabricating magnetoresistive (MR) sensor element

发明授权

US06383574B1 Ion implantation method for fabricating magnetoresistive (MR) sensor element 失效

标题翻译：用于制造磁阻（MR）传感器元件的离子注入方法

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专利标题： Ion implantation method for fabricating magnetoresistive (MR) sensor element
专利标题（中）： 用于制造磁阻（MR）传感器元件的离子注入方法
申请号： US09360118

申请日： 1999-07-23
公开(公告)号： US06383574B1

公开(公告)日： 2002-05-07
发明人: Cherng-Chyi Han , Rong-Fu Xiao , Mao-Min Chen , Po-Kang Wang
申请人： Cherng-Chyi Han , Rong-Fu Xiao , Mao-Min Chen , Po-Kang Wang
主分类号： B05D500
IPC分类号： B05D500

Ion implantation method for fabricating magnetoresistive (MR) sensor element

摘要：

A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.

摘要（中）：

形成磁阻（MR）层的方法首先采用形成由磁阻（MR）材料形成的磁阻（MR）层的衬底。然后选择性地离子注入，同时采用离子注入法，磁阻（MR）层形成：（1）由离子注入的磁阻（MR）材料形成的磁阻（MR）层的离子注入部分; 和（2）由磁阻（MR）材料形成的磁阻（MR）层的邻接非离子注入部分，其中离子注入磁阻（MR）材料是非磁阻（MR）材料。该方法可以用于在具有增强的尺寸均匀性的磁阻（MR）传感器元件磁阻（MR）层内形成，特别是增强的覆盖尺寸均匀性。

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