发明授权
- 专利标题： Method of evaluating quality of silicon wafer and method of reclaiming the water
- 专利标题（中）： 评估硅晶片质量的方法和回收晶圆的方法
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申请号： US09597577申请日： 2000-06-20
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公开(公告)号： US06384415B1公开(公告)日： 2002-05-07
- 发明人: Tetsuo Suzuki , Kunio Otsuka
- 申请人： Tetsuo Suzuki , Kunio Otsuka
- 主分类号： G01J502
- IPC分类号： G01J502
摘要：
A method of evaluating the quality of a silicon wafer is characterized by analyzing a silicon wafer by an infrared absorption spectrum, and then evaluating the quality of the silicon crystal based on an absorbance ratio represented by the following formula (1): {(Absorbance &agr;1 at an arbitrary wavenumber between 1055 and 1080 cm−1)−(Absorbance &agr;BL of base line)}/{(Absorbance &agr;2 at an arbitrary wavenumber between 1100 and 1120 cm−1)−(Absorbance &agr;BL of base line)} (1) wherein absorbances &agr;1 and &agr;2 represent absorbances of the measured silicon wafer, and base line absorbance &agr;BL represents the absorbance of a base line of the measured silicon wafer, which is drawn from 1030 to 1170 cm−1. By using the quality evaluating method of the present invention, internal crystal defects of silicon can be precisely detected in a non-destructive manner. The method of the present invention thus has the advantages of improving productivity, decreasing reclaiming cost, etc.
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