发明授权
US06384460B1 Self-aligned metal electrode structure for elevated sensors 有权
用于升高传感器的自对准金属电极结构

  • 专利标题: Self-aligned metal electrode structure for elevated sensors
  • 专利标题(中): 用于升高传感器的自对准金属电极结构
  • 申请号: US09326340
    申请日: 1999-06-07
  • 公开(公告)号: US06384460B1
    公开(公告)日: 2002-05-07
  • 发明人: Jeremy A. TheilMin Cao
  • 申请人: Jeremy A. TheilMin Cao
  • 主分类号: H01L310376
  • IPC分类号: H01L310376
Self-aligned metal electrode structure for elevated sensors
摘要:
A self-aligned metal electrode sensor structure. The self-aligned metal electrode sensor structure includes a substrate which includes electronic circuitry. An interconnect structure is formed adjacent to the substrate. The interconnect structure includes conductive interconnect vias which pass through the interconnect structure. A sensor is formed adjacent to the interconnect structure. The sensor includes a pixel metallization section and a doped layer electrode. The pixel metallization section is electrically connected to the interconnect via. The pixel metallization section includes an outer surface which is substantially planar. The doped layer electrode includes an inner surface adjacent to the outer surface of the pixel metallization section. The entire inner surface of the doped layer electrode is substantially planar. A transparent conductive layer is formed adjacent to the sensor. The interconnect via and the transparent conductive layer electrically connect the electronic circuitry to the sensor. An embodiment includes the outer surface of the pixel metallization section having an outer surface area which is substantially equal to an inner surface area of the inner surface of the doped layer electrode. Another embodiment includes the outer surface of the pixel metallization section having an outer surface area which is less than an inner surface area of the inner surface of the doped layer electrode.
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