Invention Grant
- Patent Title: Anneal for enhancing the electrical characteristic of semiconductor devices
- Patent Title (中): 用于增强半导体器件的电气特性的退火
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Application No.: US09499336Application Date: 2000-02-04
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Publication No.: US06387761B1Publication Date: 2002-05-14
- Inventor: Wong-Cheng Shih , Pravin K. Narwankar , Randall S. Urdahl , Turgut Sahin
- Applicant: Wong-Cheng Shih , Pravin K. Narwankar , Randall S. Urdahl , Turgut Sahin
- Main IPC: H01L218238
- IPC: H01L218238
Abstract:
A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H2). In a prefered embodiment of the present invention the ambient comprises H2 and N2.
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