发明授权
- 专利标题: Methods of T-gate fabrication using a hybrid resist
- 专利标题(中): 使用混合抗蚀剂的T型栅极制造方法
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申请号: US09299267申请日: 1999-04-26
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公开(公告)号: US06387783B1公开(公告)日: 2002-05-14
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Paul A. Rabidoux
- 申请人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Paul A. Rabidoux
- 主分类号: H01L2128
- IPC分类号: H01L2128
摘要:
Methods for forming a T-gate on a substrate are provided that employ a hybrid resist. The hybrid resist specifically is employed to define a base of the T-gate on the substrate with very high resolution. To define a base of the T-gate, a hybrid resist layer is deposited on the substrate. A mask having a reticle feature with an edge is provided and is positioned above the hybrid resist layer so that the edge of the reticle feature is above a desired location for the base of the T-gate. Thereafter, the hybrid resist layer is exposed to radiation through the mask, and the exposed hybrid resist layer is developed to define an opening therein for the base of the T-gate. Preferably the loop feature formed in the hybrid resist layer by the reticle feature during exposure is trimmed. The T-gate may be completed by employing any known T-gate fabrication techniques.
公开/授权文献
- US20020048858A1 METHODS OF T-GATE FABRICATION USING A HYBRID RESIST 公开/授权日:2002-04-25