发明授权
- 专利标题: Surface acoustic wave device and process for manufacturing the same
- 专利标题(中): 表面声波装置及其制造方法
-
申请号: US09639099申请日: 2000-08-16
-
公开(公告)号: US06388361B1公开(公告)日: 2002-05-14
- 发明人: Tokihiro Nishihara , Osamu Ikata , Yoshio Satoh
- 申请人: Tokihiro Nishihara , Osamu Ikata , Yoshio Satoh
- 优先权: JP11-295470 19991018
- 主分类号: H03H925
- IPC分类号: H03H925
摘要:
A surface acoustic wave device includes a substrate at least a surface of which has a piezoelectric function, and an electrode formed on the substrate, wherein the electrode is composed of a first film of Al containing Cu at or over a solid solubility limit of Cu to Al and one or more unit(s) of a second film of Al containing Mg at or over a Solid solubility limit of Mg to Al and a third film of Al containing Cu at or over the solid solubility limit of Cu to Al formed on the first film in this order, and the first film and the third film contain Mg diffused from the second film.