发明授权
US06388468B1 Circuit and method for operating a MOSFET control circuit with a system operating voltage greater than a maximum supply voltage limit
失效
用于操作具有大于最大电源电压限制的系统工作电压的MOSFET控制电路的电路和方法
- 专利标题: Circuit and method for operating a MOSFET control circuit with a system operating voltage greater than a maximum supply voltage limit
- 专利标题(中): 用于操作具有大于最大电源电压限制的系统工作电压的MOSFET控制电路的电路和方法
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申请号: US09651481申请日: 2000-08-30
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公开(公告)号: US06388468B1公开(公告)日: 2002-05-14
- 发明人: Kang Li
- 申请人: Kang Li
- 主分类号: H03K190175
- IPC分类号: H03K190175
摘要:
A circuit and method for operating a MOSFET control circuit, having a maximum supply voltage limit, with a system operating voltage greater than the maximum supply voltage limit. The system operating voltage is referenced to a first ground. The MOSFET control circuit has a power supply input for receiving the system operating voltage and for generating a signal having a maximum voltage level and a minimum voltage level. A ground floating circuit includes a second ground, having a greater potential than the first ground, for establishing a voltage difference between the MOSFET control circuit power supply input and the second ground. The voltage difference being less than the maximum supply voltage limit. A first signal level shifting circuit shifts one of the maximum voltage level and the minimum voltage level of the signal from a first reference voltage to a second reference voltage. The method includes the steps of providing the MOSFET control circuit; establishing the voltage difference with the ground floating circuit including the second ground; and shifting one of the maximum voltage level and the minimum voltage level of the signal from a first reference voltage to a second reference voltage with a first signal level shifting circuit.
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