发明授权
- 专利标题: Smoothing method for cleaved films made using a release layer
- 专利标题(中): 使用剥离层制成的切割膜的平滑方法
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申请号: US09364209申请日: 1999-07-30
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公开(公告)号: US06391219B1公开(公告)日: 2002-05-21
- 发明人: Sien G. Kang , Igor J. Malik
- 申请人: Sien G. Kang , Igor J. Malik
- 主分类号: H01L2176
- IPC分类号: H01L2176
摘要:
A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which had a porous silicon layer thereon. The substrate may have a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce a surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.