发明授权
US06396117B1 Semiconductor photodetector, method for manufacturing semiconductor photodetector and photodetector module 有权
半导体光电检测器,半导体光电检测器和光电检测器模块的制造方法

  • 专利标题: Semiconductor photodetector, method for manufacturing semiconductor photodetector and photodetector module
  • 专利标题(中): 半导体光电检测器,半导体光电检测器和光电检测器模块的制造方法
  • 申请号: US09246143
    申请日: 1999-02-08
  • 公开(公告)号: US06396117B1
    公开(公告)日: 2002-05-28
  • 发明人: Ryozo FurukawaMasanobu Kato
  • 申请人: Ryozo FurukawaMasanobu Kato
  • 优先权: JP10-245116 19980831
  • 主分类号: H01L3100
  • IPC分类号: H01L3100
Semiconductor photodetector, method for manufacturing semiconductor photodetector and photodetector module
摘要:
Light on the longer wavelength side can be photoelectrically converted and output reliably, whilst improving the structural and operational reliability of a photodetector, by means of a simple manufacturing process and inexpensive manufacturing costs. A first light-absorbing layer, a buffer layer of a second conductivity type, a second light-absorbing layer of a second conductivity type and a window layer of a second conductivity type are laminated in this order onto the first principal surface of a substrate of a first conductivity type. The first light-absorbing layer contains a region of the first conductivity type and a region of the second conductivity type, and a diffused region of the first conductivity type having a depth extending from the upper face of the window layer to the interface between the window layer and the second light-absorbing layer is provided in a portion of the window layer. A main electrode of a first conductivity type is provided on the diffused region, whilst a main electrode of a second conductivity type is provided on the window layer in the vicinity of the diffused region. The energy gap wavelength of the second light-absorbing layer is longer than the energy gap wavelength of the first light-absorbing layer, whilst the energy gap wavelength of the first light-absorbing layer is longer than the respective energy gap wavelengths of the substrate, buffer layer and window layer.
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