发明授权
- 专利标题: Thin film piezoelectric element
- 专利标题(中): 薄膜压电元件
-
申请号: US09381167申请日: 1999-09-16
-
公开(公告)号: US06396200B2公开(公告)日: 2002-05-28
- 发明人: Koichiro Misu , Tsutomu Nagatsuka , Shusou Wadaka
- 申请人: Koichiro Misu , Tsutomu Nagatsuka , Shusou Wadaka
- 优先权: JP10-006844 19980116; JP10-006845 19980116
- 主分类号: H01L4108
- IPC分类号: H01L4108
摘要:
A film bulk acoustic wave device, comprising: a substrate; a bottom electrode formed on one surface of the substrate; a piezoelectric film formed on the bottom electrode; and a first top electrode formed on the piezoelectric film, further comprises a second top electrode having a larger mass load than the first top electrode, and formed on the first top electrode on the piezoelectric film when viewed from the center of the first top electrode, wherein the piezoelectric film has a high-band-cut-off-type dispersion characteristic. The cut-off frequency of a second top electrode portion piezoelectric film having a large mass load can be lower than the cut-off frequency of a first top electrode portion piezoelectric film, to thereby trap the energy of the acoustic wave in a region of the first top electrode portion side, so that good performance may be feasible.
公开/授权文献
- US20020014808A1 THIN FILM PIETOELECTRIC ELEMENT 公开/授权日:2002-02-07