发明授权
- 专利标题： Processes to improve electroplating fill
- 专利标题（中）： 改善电镀填充的工艺
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申请号： US09386077申请日： 1999-08-30
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公开(公告)号： US06399479B1公开(公告)日： 2002-06-04
- 发明人: Fusen Chen , Zheng Xu , Peijun Ding , Barry Chin , Ashok Sinha
- 申请人： Fusen Chen , Zheng Xu , Peijun Ding , Barry Chin , Ashok Sinha
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
The invention provides a method for filling a structure on a substrate comprising: depositing a barrier layer on one or more surfaces of the structure, depositing a seed layer over the barrier layer, removing a portion of the seed layer, and electrochemically depositing a metal to fill the structure. Preferably, a portion or all of the seed layer formed on the sidewall portion of the structure is removed using a electrochemical de-plating process prior to the electroplating process.
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