Invention Grant
US06404667B1 2T-1C ferroelectric random access memory and operation method thereof
有权
2T-1C铁电随机存取存储器及其操作方法
- Patent Title: 2T-1C ferroelectric random access memory and operation method thereof
- Patent Title (中): 2T-1C铁电随机存取存储器及其操作方法
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Application No.: US09658942Application Date: 2000-09-11
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Publication No.: US06404667B1Publication Date: 2002-06-11
- Inventor: In-Kyeong Yoo
- Applicant: In-Kyeong Yoo
- Main IPC: G11C1122
- IPC: G11C1122
Abstract:
A 2T-1C FRAM, each cell of which includes two transistors and one ferroelectric capacitor so that the “charging” and “discharging” of the ferroelectric capacitor used in conjunction with the p-n junction of the two transistors performs write/read operations without switching thereby avoiding degradation problems such as fatigue and imprint in the 2T-1C FRAM.
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