发明授权
- 专利标题: Magnetic element and magnetic memory device
- 专利标题(中): 磁性元件和磁性存储器件
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申请号: US09732030申请日: 2000-12-07
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公开(公告)号: US06404672B2公开(公告)日: 2002-06-11
- 发明人: Masashige Sato , Hideyuki Kikuchi , Kazuo Kobayashi
- 申请人: Masashige Sato , Hideyuki Kikuchi , Kazuo Kobayashi
- 优先权: JP2000-001861 20000107
- 主分类号: G11C1115
- IPC分类号: G11C1115
摘要:
A magnetic element includes a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer laminated in this order. At least one of the first and second ferromagnetic layers includes a lower ferromagnetic layer, a non-magnetic conductive layer, and an upper ferromagnetic layer laminated in this order. By changing the kind or the composition of material of the upper and lower ferromagnetic layers, the amount of magnetization of each layer can be controlled to reduce affection by magnetostatic coupling. Changeability of magnetized direction of the first or second ferromagnetic layer can be regulated thereby. This realizes an improvement of sensitivity.
公开/授权文献
- US20010007532A1 Magnetic element and magnetic memory device 公开/授权日:2001-07-12
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