Semiconductor memory device with a hierarchical word line configuration capable of preventing leakage current in a sub-word line driver

发明授权

US06407942B2 Semiconductor memory device with a hierarchical word line configuration capable of preventing leakage current in a sub-word line driver 失效

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专利标题： Semiconductor memory device with a hierarchical word line configuration capable of preventing leakage current in a sub-word line driver
申请号： US09566488

申请日： 2000-05-08
公开(公告)号： US06407942B2

公开(公告)日： 2002-06-18
发明人: Kengo Aritomi , Mikio Asakura , Takashi Ito , Kiyohiro Furutani
申请人： Kengo Aritomi , Mikio Asakura , Takashi Ito , Kiyohiro Furutani
优先权： JP11-302342(P) 19991025
主分类号： G11C506
IPC分类号： G11C506

Semiconductor memory device with a hierarchical word line configuration capable of preventing leakage current in a sub-word line driver

摘要：

Complementary sub-decode signals to be provided to a sub-word line driver are separately generated through different circuits using individual power-supply voltages. Thus, the generation of a through current in the sub-word line driver is prevented.

公开/授权文献

US20020001217A1 Semiconductor memory device with a hierarchical word line configuration capable of preventing leakage current in a sub-word line driver 公开/授权日：2002-01-03

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