发明授权
US06407944B1 Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices
有权
用于在用于高密度非易失性存储器半导体器件的测试期间保护冗余存储器单元的过度擦除的方法
- 专利标题： Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices
- 专利标题（中）： 用于在用于高密度非易失性存储器半导体器件的测试期间保护冗余存储器单元的过度擦除的方法
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申请号： US09533306申请日： 2000-03-23
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公开(公告)号： US06407944B1公开(公告)日： 2002-06-18
- 发明人: Ki-Hwan Choi , Jong-Min Park
- 申请人： Ki-Hwan Choi , Jong-Min Park
- 主分类号： G11C1606
- IPC分类号： G11C1606
摘要：
A method is disclosed for preventing over-erasure in a nonvolatile memory device having a plurality of sectors, each sector including a main field and a redundant field. The method includes the steps of programming memory cells included in the main and redundant fields, erasing the memory cells included in the main and redundant fields, and programming over-erased cells of the memory cells included in the main and redundant fields. The main and redundant fields are included in a sector.
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