Semiconductor device with source and drain electrodes in ohmic contact with a semiconductor layer

发明授权

US06410946B1 Semiconductor device with source and drain electrodes in ohmic contact with a semiconductor layer 有权

标题翻译：源极和漏极与半导体层欧姆接触的半导体器件

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专利标题： Semiconductor device with source and drain electrodes in ohmic contact with a semiconductor layer
专利标题（中）： 源极和漏极与半导体层欧姆接触的半导体器件
申请号： US09561940

申请日： 2000-05-01
公开(公告)号： US06410946B1

公开(公告)日： 2002-06-25
发明人: Takayuki Toyama
申请人： Takayuki Toyama
优先权： JPP11-126132 19990506
主分类号： H01L21338
IPC分类号： H01L21338

Semiconductor device with source and drain electrodes in ohmic contact with a semiconductor layer

摘要：

In order to reduce a contact resistance of an electrode of a semiconductor device, a metal layer is directly formed on a source area and a drain area so as to form a source electrode and a drain electrode without providing a cap layer thereunder. Consequently, a step for removing the cap layer can be eliminated, simplifying the manufacturing process for the semiconductor device.

摘要（中）：

为了降低半导体器件的电极的接触电阻，在源区域和漏极区域上直接形成金属层，以形成源电极和漏电极，而不在其下方设置盖层。因此，可以消除去除盖层的步骤，从而简化了半导体器件的制造工艺。

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