发明授权
US06413695B1 Resist compositions and patterning process 有权
抗蚀剂组合物和图案化工艺

Resist compositions and patterning process
摘要:
A resist composition comprising an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl ester compound as a dissolution regulator has a high sensitivity, resolution, etching resistance and storage stability and lends itself to micropatterning with electron beams or deep-UV rays.
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