发明授权
- 专利标题: Hermetic multi-layered circuit assemblies and method of manufacture
- 专利标题(中): 密封多层电路组件及其制造方法
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申请号: US09752999申请日: 2000-12-30
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公开(公告)号: US06414250B1公开(公告)日: 2002-07-02
- 发明人: Hiroo Inoue , Michael Howieson , Mark Brooks
- 申请人: Hiroo Inoue , Michael Howieson , Mark Brooks
- 主分类号: H01R1204
- IPC分类号: H01R1204
摘要:
Thin film, multi-layered components wherein the layers are hermetically sealed with a re-flowed conductive sealant (e.g. Pb/Sn solder). The sealant is applied to an endless ground conductor at the peripheral edge of at least one of each pair of opposed substrate layers prior to registering the conductors and re-flowing the sealant. The microstrip conductors comprise thin film adhesion and seed layers and a covering metalization. The signal and ground conductors are terminated with solder balls and the signal and ground conductors are connected with micro vias that extend through the substrates.