发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US09522908申请日： 2000-03-10
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公开(公告)号： US06417568B1公开(公告)日： 2002-07-09
- 发明人: Kazutaka Otsuki
- 申请人： Kazutaka Otsuki
- 优先权： JP11-067609 19990312
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
A polycide film is selectively formed in a bonding area of a silicon substrate. A BPSG film is formed as an interlayer insulating film comprising boron. Many contact holes are made, on the polycide film, in the BPSG film. Tungsten plugs are embedded in the contact holes. A film of titanium and a titanium compound is formed between the tungsten plugs and the aluminum film, and the BPSG film and the polycide film.
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