发明授权
- 专利标题： Mask-making using resist having SIO bond-containing polymer
- 专利标题（中）： 使用具有含SIO键的聚合物的抗蚀剂进行掩模制作
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申请号： US09602136申请日： 2000-06-23
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公开(公告)号： US06420084B1公开(公告)日： 2002-07-16
- 发明人: Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
- 申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
- 主分类号： G03F7004
- IPC分类号： G03F7004
摘要：
The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.