发明授权
- 专利标题： Light emitting diode and manufacturing method thereof
- 专利标题（中）： 发光二极管及其制造方法
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申请号： US09603855申请日： 2000-06-26
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公开(公告)号： US06420731B1公开(公告)日： 2002-07-16
- 发明人: Koji Katayama , Hideki Matsubara , Akihiko Saegusa
- 申请人： Koji Katayama , Hideki Matsubara , Akihiko Saegusa
- 优先权： JP11-187604 19990701
- 主分类号： H01L2715
- IPC分类号： H01L2715
摘要：
An injected current restriction region for restricting an increase in defects by restricting an injected current for light emission is provided inside a ZnSe-based LED. When an end of a light transmitting Au electrode is separated from a cleavage plane, a region near the cleavage plane serves as the injected current restriction region.