A method of forming a semiconductor device wherein a dummy cell region is defined at a periphery of a cell array region that includes a ferroelectric capacitor. A dummy capacitor is formed simultaneously at the dummy cell region when a ferroelectric capacitor is formed at the cell array region. Accordingly, plasma etching damage and electrical charge generation are concentrated on the dummy capacitor, thereby reducing plasma etching damage and electrical charge generation at the ferroelectric capacitor of the cell array region.