发明授权
- 专利标题: Structure and method for buried-strap with reduced outdiffusion
- 专利标题(中): 掩埋带的结构和方法减少了扩散
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申请号: US09635203申请日: 2000-08-09
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公开(公告)号: US06420750B1公开(公告)日: 2002-07-16
- 发明人: Ramachandra Divakaruni , Jack A. Mandelman
- 申请人: Ramachandra Divakaruni , Jack A. Mandelman
- 主分类号: H01L27108
- IPC分类号: H01L27108
摘要:
A method and structure for forming an integrated circuit memory device includes forming a trench conductor in a trench, forming an isolation collar along a perimeter of an upper portion of the trench conductor, forming supporting spacers above the isolation collar, forming a sacrificial layer between the supporting spacers along an upper surface of the trench conductor, forming an insulator above the sacrificial layer, forming a gate conductor above the insulator, removing the sacrificial layer to form a gap between the insulator and the trench conductor, wherein the supporting spacers maintain a relative position of the gate conductor, the insulator and the trench conductor and forming a conductive strap in the gap.