发明授权
US06421291B1 Semiconductor memory device having high data input/output frequency and capable of efficiently testing circuit associated with data input/output
失效
具有高数据输入/输出频率并能够有效测试与数据输入/输出相关的电路的半导体存储器件
- 专利标题： Semiconductor memory device having high data input/output frequency and capable of efficiently testing circuit associated with data input/output
- 专利标题（中）： 具有高数据输入/输出频率并能够有效测试与数据输入/输出相关的电路的半导体存储器件
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申请号： US09510532申请日： 2000-02-22
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公开(公告)号： US06421291B1公开(公告)日： 2002-07-16
- 发明人: Naoya Watanabe , Yoshikazu Morooka
- 申请人： Naoya Watanabe , Yoshikazu Morooka
- 优先权： JP11-215022 19990729
- 主分类号： G11C700
- IPC分类号： G11C700
摘要：
A data input/output circuit includes an S/P data conversion circuit which converts serial data input to a data terminal into a parallel data and transmits the parallel data to write data lines, a P/S data conversion circuit which converts parallel data on read data lines to serial data and outputs the serial data to the data terminal, and an input/output test circuit placed between the write data lines and the read data lines. The input/output test circuit responds to an input/output test signal to directly transfer data on the write data lines respectively to the read data lines without passing them through a memory cell array.
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