发明授权
- 专利标题： Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
- 专利标题（中）： 用于半导体器件制造装置的除粒装置和除去颗粒的方法
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申请号： US09685351申请日： 2000-10-10
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公开(公告)号： US06423176B1公开(公告)日： 2002-07-23
- 发明人: Natsuko Ito , Fumihiko Uesugi , Tsuyoshi Moriya
- 申请人： Natsuko Ito , Fumihiko Uesugi , Tsuyoshi Moriya
- 优先权： JP10-101090 19980413
- 主分类号： H05H100
- IPC分类号： H05H100
摘要：
In a semiconductor device manufacturing apparatus that processing a substrate by applying a voltage to a gas to create a plasma, positively charged particles are trapped or guided at the instant that the cathode voltage is stopped, by an electrode to which is imparted a negative voltage, so as to prevent particles reaching the substrate.
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